BAT54CV All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 15 November 2010 3 of 10
NXP Semiconductors
BAT54CV
Two Schottky barrier double diodes
[1] Tj
=25°C prior to surge.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR
are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Soldering point of cathode tab.
Per device, one diode loaded
Ptot
total power dissipation Tamb
≤
25
°C
[2]
[3]
-350mW
[4]
-420mW
Tj
junction temperature - 125
°C
Tamb
ambient temperature
?65 +125
°C
Tstg
storage temperature
?65 +150
°C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device, one diode loaded
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1][2]
[3]
--360K/W
[4]
--300K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[5]
--175K/W
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